Tuesday, May 24th, 2016

February 24, 2015, ISSCC, San Francisco—Hiroki Noguchi from Toshiba highlighted their work on a 3.3 ns embedded STT-MRAM. The design uses a physically eliminated read-disturb scheme and a normally off architecture. Spin-torque transistor magnetic RAM development continues with efforts to overcome some key critical issues. The growth of last-level cache is helping to overcome the [...]

February 24, 2015, ISSCC, San Francisco—Mario Sako from Toshiba described a low-power 64 Gb MLC NAND flash memory in15 nm CMOS. The design addresses the performance saturation of NAND and the growing volume of NAND systems like eMMC, SSD, etc. which need much lower power to improve throughput with greater chip parallelism. The system-level techniques [...]

February 23, 2015, ISSCC, San Francisco—Jaehyuk Choi from Samsung Advanced Institute of Technology described a low-power, 15 fps image sensor for always-on mobile and wearable devices. The ability to run on minimal power opens many new applications for smart sensors beyond taking pictures on a mobile device. This image sensor has two operating modes; ultra-low [...]

February 23, 2015, ISSCC, San Francisco—Jong Mi Lee from Postech in Korea described another possible architecture for ultra-low power reference circuits. The design addresses some of the challenges of other architectures. A CMOS reference uses the threshold voltage as a reference, and is process dependent compared to a bandgap reference which uses Eg, a more [...]

February 23, 2015, ISSCC, San Francisco—Kinam Kim from Samsung Electronics gave the first plenary talk relating developments in silicon technologies and the solutions they may provide for our data-driven lines. The developments include silicon, packaging, and small chip security for IoT. The number of connected devices already exceeds the number of people, and will continue [...]

December 15, 2014, International Electron Devices Meeting, San Francisco—John Palmour from Cree talked about the state of the industry in the silicon carbide power area. The various developments in technologies allows these power devices to address more applications. Silicon carbide is being adapted for many applications, such as GaN on SiC substrates for LEDs, and [...]

October 1, 2014, Arm TechCon, Santa Clara, CA—Mukund Srinivasan from Ittiam described the requirements and results of accelerating the newest codecs on GPUs. The needs for higher compression ratios for video is facing the challenges of compute workloads and CPU capacity. The market is seeing much more video on all devices, but particularly on mobile [...]

September 15, 2014, Custom Integrated Circuits Conference, San Jose, CA—Tsuenobu Kimoto talked about the prospects for SiC ICs. The material is interesting for its inherent characteristics and is suitable for ICs operating at high temperatures and radiation-hard environments. The evolution from discrete power devices to ICs will require efforts to overcome the technology challenges. Silicon [...]

September 9, 2014, Intel Developer Forum, San Francisco—Pericom announced a broad range of new products at the show. Following the lead of the standards organizations and OEM roadmaps, they are making products that will enhance mobility and interoperability. The emphasis is on low power operation and small packaging for all of the parts. The new [...]

September 9, 2014, Intel Developer Forum, San Francisco—Renesas Showed off their latest USB functions with a pair of chips that enable the USB 3.0 power delivery function. They also showed some production samples of the new type-c connector for the power delivery. The power deliver controller (uPD720250) supports up to 100W (5A at 20V) power [...]