Monolithic 3-D Integration of Logic and Memory: Carbon Nanotube FETs, Resistive RAM, and Silicon FETs
December 17, 2014, IEDM, San Francisco—Max M. Shulaker from Stanford showed the integration of logic and memory in a 3-D IC using RRAM and carbon nano-tubes. The demonstration circuit is an FPGA routing element the combines the logic and memory functions. Monolithic 3-D integration, whereby each circuit layer is thin and is fabricated directly over…