Stacked 3-D Crossbar Resistive Memory
December 15, 2014, IEDM, San Francisco—Sung Hyun Jo from Crossbar presented results of new devices and architectures for resistive RAM. A new selector design improves performance and reduces sneak currents in the memories. For ultra-high density nonvolatile memory applications (>1Tb), 3D-stackable 1TnR or 1S1R structures is needed. Suppressing the leakage (sneak) current in 1TnR or…